Isotropic dielectric functions of highly disordered AlxGa1-xInP (0≤x≤1) lattice matched to GaAs
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Abstract
Determination of the complex dielectric function and the critical-point energies of (AlxGa1-x)0.51In0.49P, over the full range of composition x and for photon energies E from 0.75 to 5 eV is reported from variable angle of incidence spectroscopic ellipsometry. Native-oxide effects on the (AlxGa1-x)0.51In0.49P optical functions are removed numerically. The highly disordered state of the metalorganic vapor-phase epitaxy grown samples is analyzed by transmission electron microscopy. Optical anisotropy investigations revealed that the order-induced optical birefringence is negligible throughout. The augmentation of A. D. Rakic and M. L. Majewski [J. Appl. Phys. 80, 5909 (1996)] to Adachis critical-point model, i.e., consideration of Gaussian-like broadening function instead of Lorentzian broadening, is used for calculation of the isotropic (AlxGa1-x)0.51In0.49P dielectric function ∈. The optical functions spectra consistently match the experimental data, whereas previously reported model dielectric functions fail to reproduce the correct absorption behavior of the quaternary, especially near the fundamental band-to-band transition. The results are compared to those presented previously, and influence of spontaneous chemical ordering is discussed. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Isotropic dielectric functions of highly disordered Al<sub>x</sub>Ga<sub>1-x</sub>InP (0≤x≤1) lattice matched to GaAs</title><author><name sortKey="Schubert, M" uniqKey="Schubert M">M. Schubert</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research and Department of Electrical Engineering, University of Nebraska, Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Woollam, J A" uniqKey="Woollam J">J. A. Woollam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research and Department of Electrical Engineering, University of Nebraska, Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Leibiger, G" uniqKey="Leibiger G">G. Leibiger</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Department of Semiconductor Physics, Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig, Germany</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Semiconductor Physics, Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Rheinlander, B" uniqKey="Rheinlander B">B. Rheinlander</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Department of Semiconductor Physics, Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig, Germany</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Semiconductor Physics, Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Pietzonka, I" uniqKey="Pietzonka I">I. Pietzonka</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Sasz, T" uniqKey="Sasz T">T. Sasz</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Gottschalch, V" uniqKey="Gottschalch V">V. Gottschalch</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0381521</idno><date when="1999-08-15">1999-08-15</date><idno type="stanalyst">PASCAL 99-0381521 AIP</idno><idno type="RBID">Pascal:99-0381521</idno><idno type="wicri:Area/Main/Corpus">014841</idno><idno type="wicri:Area/Main/Repository">013C89</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Birefringence</term><term>Dielectric function</term><term>Ellipsometry</term><term>Experimental study</term><term>Gallium compounds</term><term>Gaussian distribution</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line broadening</term><term>Optical constants</term><term>Semiconductor epitaxial layers</term><term>TEM</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7145G</term><term>7820C</term><term>7820F</term><term>6855L</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Fonction diélectrique</term><term>Ellipsométrie</term><term>TEM</term><term>Biréfringence</term><term>Loi Gauss</term><term>Elargissement raie</term><term>Constante optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Determination of the complex dielectric function and the critical-point energies of (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P, over the full range of composition x and for photon energies E from 0.75 to 5 eV is reported from variable angle of incidence spectroscopic ellipsometry. Native-oxide effects on the (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P optical functions are removed numerically. The highly disordered state of the metalorganic vapor-phase epitaxy grown samples is analyzed by transmission electron microscopy. Optical anisotropy investigations revealed that the order-induced optical birefringence is negligible throughout. The augmentation of A. D. Rakic and M. L. Majewski [J. Appl. Phys. 80, 5909 (1996)] to Adachis critical-point model, i.e., consideration of Gaussian-like broadening function instead of Lorentzian broadening, is used for calculation of the isotropic (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P dielectric function ∈. The optical functions spectra consistently match the experimental data, whereas previously reported model dielectric functions fail to reproduce the correct absorption behavior of the quaternary, especially near the fundamental band-to-band transition. The results are compared to those presented previously, and influence of spontaneous chemical ordering is discussed. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>86</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Isotropic dielectric functions of highly disordered Al<sub>x</sub>Ga<sub>1-x</sub>InP (0≤x≤1) lattice matched to GaAs</s1></fA08><fA11 i1="01" i2="1"><s1>SCHUBERT (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>WOOLLAM (J. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEIBIGER (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>RHEINLANDER (B.)</s1></fA11><fA11 i1="05" i2="1"><s1>PIETZONKA (I.)</s1></fA11><fA11 i1="06" i2="1"><s1>SASZ (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>GOTTSCHALCH (V.)</s1></fA11><fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Semiconductor Physics, Faculty of Physics and Geoscience, University of Leipzig, D-04103 Leipzig, Germany</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>University of Leipzig, Faculty of Chemistry and Mineralogy, Department of Solid State Chemistry, D-04103 Leipzig, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2025-2033</s1></fA20><fA21><s1>1999-08-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0381521</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Determination of the complex dielectric function and the critical-point energies of (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P, over the full range of composition x and for photon energies E from 0.75 to 5 eV is reported from variable angle of incidence spectroscopic ellipsometry. Native-oxide effects on the (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P optical functions are removed numerically. The highly disordered state of the metalorganic vapor-phase epitaxy grown samples is analyzed by transmission electron microscopy. Optical anisotropy investigations revealed that the order-induced optical birefringence is negligible throughout. The augmentation of A. D. Rakic and M. L. Majewski [J. Appl. Phys. 80, 5909 (1996)] to Adachis critical-point model, i.e., consideration of Gaussian-like broadening function instead of Lorentzian broadening, is used for calculation of the isotropic (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.51</sub>In<sub>0.49</sub>P dielectric function ∈. The optical functions spectra consistently match the experimental data, whereas previously reported model dielectric functions fail to reproduce the correct absorption behavior of the quaternary, especially near the fundamental band-to-band transition. The results are compared to those presented previously, and influence of spontaneous chemical ordering is discussed. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70A45G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H20F</s0></fC02><fC02 i1="05" i2="3"><s0>001B60H55L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7145G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7820F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Fonction diélectrique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Dielectric function</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Ellipsométrie</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ellipsometry</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>TEM</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>TEM</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Biréfringence</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Birefringence</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Loi Gauss</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gaussian distribution</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Elargissement raie</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Line broadening</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Constante optique</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Optical constants</s0></fC03><fN21><s1>242</s1></fN21><fN47 i1="01" i2="1"><s0>9929M000195</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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